unisonic technologies co., ltd 2sb936 preliminary pnp epitaxial silicon transistor www.unisonic.com.tw 1 of 3 copyright ? 2013 unisonic technologies co., ltd qw-r209-029.a silicon pnp epitaxial planar type ? description the utc 2sb936 is a silicon pnp epitaxial planar type, it uses utc?s advanced technology to provide the customers with high dc current gain, low collector to emitter saturation voltage and high switch speed, etc. the utc 2sb936 is suitable for small electronic equipment and printed circuit board, etc. ? features * high dc current gain * low collector to emitter saturation voltage * high switch speed ? ordering information ordering number package pin assignment packing lead free halogen free 1 2 3 2sb936l-tn3-t 2sb936g-tn3-t to-252 b c e tube 2SB936L-TN3-R 2sb936g-tn3-r to-252 b c e tape reel note: pin assignment: b: base c: collector e: emitter
2sb936 preliminary pnp epitaxial silicon transistor unisonic technologies co., ltd 2 of 3 www.unisonic.com.tw qw-r209-029.a ? absolute maximum ratings (t c =25 c) parameter symbol ratings unit collector-base voltage v cbo -40 v collector-emitter voltage v ceo -20 v emitter-base voltage v ebo -5 v collector current i c -10 a peak collector current i cp -20 a collector power dissipation t c =25c p c 40 w t a =25c 1.3 w junction temperature t j 150 c storage temperature t stg -55 ~+150 c note: absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. ? electrical characteristics (t c =25 c) parameter symbol test conditions min typ max unit collector-base breakdown voltage bv cbo i c =-10ma, i e =0 -40 v collector-emitter voltage bv ceo i c =-10ma, i b =0 -20 v emitter-base breakdown voltage bv ebo i c =-10ma, i c =0 -5 v collector cut-off current i cbo v cb =-40v, i e =0 -50 a emitter cut-off current i ebo v eb =-5v, i c =0 -50 a dc current gain h fe1 v ce =-2v, i c =-0.1a 45 h fe2 v ce =-2v, i c =-3 a 90 collector-emitter satu ration voltage v ce ( sat ) i c =-10a, i b =-0.33a -0.6 v base-emitter satura tion voltage v be ( sat ) i c =-10a, i b =-0.33a -1.5 v transition frequency f t v ce =-10v, f=10mhz, i c =-0.5a 100 mhz output capacitance c ob v cb =-10v, f=1mhz, i e =0 400 pf turn-on time t on i c =-3a, i b1 =-0.1a, i b2 =0.1a 0.1 s storage time t s 0.5 s fall time t r 0.1 s
2sb936 preliminary pnp epitaxial silicon transistor unisonic technologies co., ltd 3 of 3 www.unisonic.com.tw qw-r209-029.a utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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